Article 6218

Title of the article

THE CHOICE OF THE ELECTRICAL PARAMETERS OF INTEGRATED CIRCUIT SPECIAL PURPOSE FOR THE INDIVIDUAL
FORECASTING OF QUALITY AND RELIABILITY 

Authors

Mishanov Roman Olegovich, postgraduate student, Samara National Research University named after academician S. P. Korolev (443086, 34 Moskovskoye highway, Samara, Russia), mishanov91@bk.ru
Piganov Mikhail Nikolaevich, doctor of technical sciences, professor, sub-department of construction and technology of electronic systems and devices department, Samara National Research University named after academician S. P. Korolev (443086, 34 Moskovskoye highway, Samara, Russia), kipres@ssau.ru
Perevertov Valeriy Petrovich, candidate of technical sciences, associate professor, sub-department of land transport and technological means, Samara State University of Way of Communication (443066, 18 The first nameless lane, Samara, Russia), vperevertov@yandex.ru

Index UDK

621.382

DOI

10.21685/2307-4205-2018-2-6

Abstract

Background. Determination of the electrical parameters of integrated microcircuits manufactured by CMOS technology for individual forecasting (PI) of quality and reliability indicators is an important component of the reliability prediction process. From their choice, both the correctness of the forecasts and their accuracy depends significantly. In this case, the choice of parameters should be justified in accordance with the results of physicochemical methods for investigating failures of IMS produced by a specific technology. It is also important to take into account the statistical data of CMOS IMS failures. 
Materials and methods. The systematization of information by types, attributes, causes, failure mechanisms, as well as possible defects in the IC structure, together with statistical data on failures, allows to identify the monitored parameters of CMOS ICs bearing information on the potential reliability of products. The determination of the electrical parameters of CMOS ICs, which tend to early exit beyond the established limits and carry information about the most probable failures for the given manufacturing technology, allows obtaining the necessary accuracy of forecasts.
Results. The information given in this work is intended to determine the set of electrical parameters of the CMOS IC for carrying out the IP, depending on the expected structural defects and failure mechanisms occurring in the IC structure. Also, the work considers the impact of the damaging factors of outer space, which is relevant for CMOS special purpose IC. 
Conclusions. Changes in some electrical parameters of the IC correspond to a wide range of possible causes, failure mechanisms and defects. Such parameters should be used as the initial data for conducting IP. It is established that the set of electrical parameters can significantly change if there are suspicions of specific defects in the manufacture of IC.

Key words

reliability, quality, safety, failure, CMOS chip, individual forecasting, electrical parameters, failure mechanism, failure mode, failure reasons, defect

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Дата создания: 18.06.2018 14:07
Дата обновления: 19.06.2018 09:24